PART |
Description |
Maker |
ADSP-BF608 ADSP-BF609 ADSP-BF607 |
Blackfin Dual-Core Processor up to 1GHz with Hardware Support for VGA Video Analytics Blackfin Dual-Core Processor up to 1GHz with Hardware Support for HD Video Analytics Blackfin Dual-Core Processor up to 1GHz for High Performance Digital Signal Processing Applications
|
Analog Devices
|
HA2-2548-5 HA2-2548-9 HA7-2548-5 HA3-2548-5 HA9P25 |
150MHz, High Slew Rate, Precision Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
LT1221 LT1221C LT1221CN8 LT1221CS8 LT1221M LT1221M |
From old datasheet system 150MHz, 250V/ms, A 4 Operational Amplifier 150MHz Operational Amplifier
|
LINER[Linear Technology]
|
MB511 |
1GHz HIGH SPEED PRESCALER
|
FUJITSU
|
D2229UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SemeLAB
|
D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
TIM7179-25UL |
HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
MM908E62108 |
Integrated Quad Half-bridge and Triple High Side with Embedded MCU and LIN for High End Mirror
|
Freescale Semiconductor, Inc
|
D2053UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-28V-1GHz,推拉)
|
SemeLAB SEME-LAB[Seme LAB]
|
D2031UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
D2005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端) METAL GATE RF SILICON FET
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
EW750-100-FB EW750-100-GB EW750-100-JB EW750-100-K |
HIGH POWER EDGEWOUND RESISTORS TUBULAR, 75 WATT to 2000 WATT
|
RCD COMPONENTS INC.
|